| PART |
Description |
Maker |
| AM29F040B AM29F040B-70 29F040 AM29F040B-90PIB AM29 |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 4兆位12亩8位）的CMOS 5.0伏只，统一部门快闪记忆
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| EN29SL160 EN29SL160B-90BC EN29SL160B-90BCP EN29SL1 |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
|
Eon Silicon Solution Inc.
|
| EN39SL160AH-70BAP EN39SL160AH-70BIP EN39SL160AL-70 |
16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
|
Eon Silicon Solution Inc.
|
| AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29LV400B-100WAC AM29LV400B-100WACB AM29LV400B-10 |
PTSE 6C 6#20 SKT RECP
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Metal; Series:MS C-26482 Series I; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp,
CAP 0.47UF 50V 50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU
PTSE 3C 3#20 PIN RECP
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 150 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| S29AL004D70MFI010 S29AL004D70BFI010 S29AL004D70BFI |
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PBGA48
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory FLASH 3V PROM, PDSO48
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory FLASH 3V PROM, PDSO44
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| S29AL008J S29AL008J70TFI020 S29AL008J70BFI020 |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
SPANSION
|
| AM29F800BT-90ED AM29F800BT-90EF AM29F800BT-90EK AM |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
|
AMD[Advanced Micro Devices]
|
| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
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